INSITU DOPING OF SILICON USING THE GAS IMMERSION LASER DOPING (GILD) PROCESS

被引：21

作者：

CAREY, PG ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90234-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：325 / 332

页数：8

共 12 条

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[3]

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[4]

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[5] NUMERICAL-SIMULATION OF THE GAS IMMERSION LASER DOPING (GILD) PROCESS IN SILICON [J].

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[6]

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[7] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

LIU, TM ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :59-62

[8] TIME RESOLVED MEASUREMENTS DURING PULSED LASER IRRADIATION OF SILICON [J].

LOWNDES, DH ;

JELLISON, GE .

SEMICONDUCTORS AND SEMIMETALS, 1984, 23 (0C) :313-404

[9] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J].

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[10]

Smith Stevie, COMMUNICATION

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