A SHALLOW JUNCTION SUBMICROMETER PMOS PROCESS WITHOUT HIGH-TEMPERATURE ANNEALS

[1] ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1269 - 1271

[2] FABRICATION OF SUBMICROMETER MOSFETS USING GAS IMMERSION LASER DOPING (GILD) [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 440 - 442

[3] CAREY PG, 1985, IEEE ELECT DEVICE LE, V6, P241

[4] CAREY PG, 1988, P S LASER PROCESSES, V8810, P44

[5] CAREY PR, IN PRESS

[6] SHALLOW JUNCTION FORMATION BY PREAMORPHIZATION WITH TIN IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (10) : 575 - 577

[7] HO CP, 1983, SEL83001 STANF U STA

[8] FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 568 - 573

[9] NUMERICAL-SIMULATION OF THE GAS IMMERSION LASER DOPING (GILD) PROCESS IN SILICON [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (02) : 205 - 214

[10] Liu R., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P58

[1] ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1269 - 1271

[2] FABRICATION OF SUBMICROMETER MOSFETS USING GAS IMMERSION LASER DOPING (GILD) [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 440 - 442

[3] CAREY PG, 1985, IEEE ELECT DEVICE LE, V6, P241

[4] CAREY PG, 1988, P S LASER PROCESSES, V8810, P44

[5] CAREY PR, IN PRESS

[6] SHALLOW JUNCTION FORMATION BY PREAMORPHIZATION WITH TIN IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (10) : 575 - 577

[7] HO CP, 1983, SEL83001 STANF U STA

[8] FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 568 - 573

[9] NUMERICAL-SIMULATION OF THE GAS IMMERSION LASER DOPING (GILD) PROCESS IN SILICON [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (02) : 205 - 214

[10] Liu R., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P58