ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI

被引：67

作者：

AJMERA, AC

ROZGONYI, GA

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1269 / 1271

页数：3

共 8 条

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[8] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+ [J].

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