DISTRIBUTION OF IMPLANTED IONS UNDER ARBITRARILY SHAPED MASK EDGES

被引：55

作者：

RUNGE, H ^{[1
]}

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1002/pssa.2210390228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：595 / 599

页数：5

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