LATERAL SPREAD OF P-31 AND B-11 IONS IMPLANTED IN SILICON

被引：13

作者：

OKABAYASHI, H ^{[1
]}

SHINODA, D ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, CENT RES LABS, KAWASAKI, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.1662924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4220 / 4221

页数：2

共 9 条

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[3]

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[4] BACKSCATTERING STUDY ON LATERAL SPREAD OF IMPLANTED IONS [J].

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MATSUMURA, H .

APPLIED PHYSICS LETTERS, 1973, 22 (03) :97-98

[5] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H ;

MATSUMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+

[6]

FURUKAWA S, PRIVATE COMMUNICATIO

[7]

LINDHARD J, 1963, K DAN VIDENSK SE MFM, V33

[8] ION-IMPLANTED PHOSPHOROUS IN SILICON - PROFILES USING C-V ANALYSIS [J].

MOLINE, RA .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3553-&

[9]

SIGMUND P, 1967, P INT C APPLICATIONS, P215

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