TRANSMISSION ELECTRON MICROSCOPICAL IMAGING OF LATERAL IMPLANTATION EFFECTS NEAR MASK EDGES IN B+-IMPLANTED SI-WAFERS

被引：6

作者：

KRIMMEL, EF

OPPOLZER, H

RUNGE, H

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期

关键词：

D O I：

10.1051/rphysap:019780013012079100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：791 / 795

页数：5

共 6 条

[1] KRIMMEL EF, 1977, 7 INT C AT COLL SOL
[2] LATERAL SPREAD OF DAMAGE FORMED BY ION-IMPLANTATION
MATSUMURA, H
FURUKAWA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 1746 - 1751
[3] MATSUMURA H, 1976, JPN J APPL PHYS, V14, P1983
[4] PETIT HR, 1971, 25TH P AN M EMAG, P290
[5] DISTRIBUTION OF IMPLANTED IONS UNDER ARBITRARILY SHAPED MASK EDGES
RUNGE, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (02): : 595 - 599
[6] STRUCTURAL AND ELECTRICAL PROFILES FOR DOUBLE DAMAGE LAYERS IN ION-IMPLANTED SILICON
SADANA, DK
FLETCHER, J
BOOKER, GR
[J]. ELECTRONICS LETTERS, 1977, 13 (21) : 632 - 633