ON THE ORIGINS OF STRUCTURAL DEFECTS IN BF2+-IMPLANTED AND RAPID-THERMALLY-ANNEALED SILICON - CONDITIONS FOR DEFECT-FREE REGROWTH

被引：29

作者：

SANDS, T

WASHBURN, J

MYERS, E

SADANA, DK

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[2] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90577-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：337 / 341

页数：5

共 18 条

[1]

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[2] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].

CARTER, C ;

MASZARA, W ;

SADANA, DK ;

ROZGONYI, GA ;

LIU, J ;

WORTMAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :459-461

[3]

CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[4]

HOFKER WK, 1975, PHILIPS RES REPORT S, V8, P15

[5]

LIU TY, 1983, THESIS U CALIFORNIA, pCH5

[6]

MASZARA W, 1983, P MAT RES SOC ENERGY

[7]

MULLER H, 1971, ION IMPLANTATION SEM, P85

[8] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

EBY, RE ;

WORTMAN, JJ ;

OZGUZ, V ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :957-959

[9]

PORTER DA, 1981, PHASE TRANSFORMATION, pCH4

[10] GERMANIUM IMPLANTATION INTO SILICON - AN ALTERNATE PRE-AMORPHIZATION RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION FORMATION [J].

SADANA, DK ;

MASZARA, W ;

WORTMANN, JJ ;

ROZGONYI, GA ;

CHU, WK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :943-945

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