NUMERICAL-SIMULATION OF THE GAS IMMERSION LASER DOPING (GILD) PROCESS IN SILICON

被引：24

作者：

LANDI, E ^{[1
]}

CAREY, PG ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1109/43.3150

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：205 / 214

页数：10

共 39 条

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