NON-EQUILIBRIUM DOPANTS INCORPORATION IN SILICON MELTED BY LASER-PULSES

[1] APPLETON BR, 1982, LASER ELECTRON BEAM

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] AUSTON DH, 1979, APPL PHYS LETT, V35, P635

[4] MODEL FOR SOLUTE REDISTRIBUTION DURING RAPID SOLIDIFICATION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1158 - 1168

[5] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 137 - 140

[6] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[7] ORIENTATION AND VELOCITY DEPENDENCE OF SOLUTE TRAPPING IN SI [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 800 - 802

[8] Baeri P., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P67

[9] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (18) : 1246 - 1249

[10] BAERI P, 1982, LASER ELECTRON BEAM

[1] APPLETON BR, 1982, LASER ELECTRON BEAM

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[3] AUSTON DH, 1979, APPL PHYS LETT, V35, P635

[4] MODEL FOR SOLUTE REDISTRIBUTION DURING RAPID SOLIDIFICATION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1158 - 1168

[5] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 137 - 140

[6] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[7] ORIENTATION AND VELOCITY DEPENDENCE OF SOLUTE TRAPPING IN SI [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 800 - 802

[8] Baeri P., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P67

[9] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (18) : 1246 - 1249

[10] BAERI P, 1982, LASER ELECTRON BEAM