NON-EQUILIBRIUM DOPANTS INCORPORATION IN SILICON MELTED BY LASER-PULSES

被引：24

作者：

CAMPISANO, SU

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 30卷 / 04期

关键词：

D O I：

10.1007/BF00614767

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：195 / 211

页数：17

相关论文

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[75] SPACE-TIME RESOLVED REFLECTIVITY MEASUREMENTS OF PICOSECOND LASER-PULSE INDUCED PHASE-TRANSITIONS IN (111) SILICON SURFACE-LAYERS
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (03): : 153 - 160
[76] YOFFA EJ, 1980, LASER ELECTRON BEAM, P59
[77] [No title captured]

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