THE APPLICATION OF LASER ANNEALING TO DOPANT PROFILING FOR SEMICONDUCTOR-DEVICES

[1] APPLETON BR, 1982, LASER ELECTRON BEAM

[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[3] CULLIS AG, 1979, J PHYS E, V12

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[5] GODFREY DJ, 1982, VLSI SCI TECHNOLOGY, V82, P154

[6] Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[7] HILL C, 1980, P LASER E BEAM PROCE, P26

[8] HOAND M, 1982, ELECT LETT, V18, P694

[9] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[10] WHITE CW, 1980, LASER ELECTRON PROCE

[1] APPLETON BR, 1982, LASER ELECTRON BEAM

[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[3] CULLIS AG, 1979, J PHYS E, V12

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[5] GODFREY DJ, 1982, VLSI SCI TECHNOLOGY, V82, P154

[6] Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[7] HILL C, 1980, P LASER E BEAM PROCE, P26

[8] HOAND M, 1982, ELECT LETT, V18, P694

[9] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[10] WHITE CW, 1980, LASER ELECTRON PROCE