DEFECTS AND LEAKAGE CURRENTS IN BF2 IMPLANTED PREAMORPHIZED SILICON

[1] ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON [J]. VACUUM, 1978, 28 (01) : 5 - 7

[2] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 48 - 49

[3] THE WIDTH OF THE NON-STEADY STATE TRANSITION REGION IN DEEP LEVEL IMPURITY MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 987 - 990

[4] PHOTOCURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3636 - 3643

[5] THE OBSERVATION OF DEEP DONOR LEVELS IN EPITAXIALLY REGROWN IMPLANTED SILICON [J]. PHYSICA B & C, 1985, 129 (1-3): : 166 - 170

[6] DEFECTS LEFT AFTER REGROWTH OF AMORPHOUS-SILICON ON CRYSTALLINE-SI - C(V) AND DLTS STUDIES [J]. REVUE DE PHYSIQUE APPLIQUEE, 1985, 20 (01): : 29 - 35

[7] CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[8] DOGHMANE MS, 1985, MATER RES SOC S P, V35, P287

[9] GOUGH PA, UNPUB HECTOR 2D DEVI

[10] DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 241 - 246

[1] ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON [J]. VACUUM, 1978, 28 (01) : 5 - 7

[2] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 48 - 49

[3] THE WIDTH OF THE NON-STEADY STATE TRANSITION REGION IN DEEP LEVEL IMPURITY MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 987 - 990

[4] PHOTOCURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3636 - 3643

[5] THE OBSERVATION OF DEEP DONOR LEVELS IN EPITAXIALLY REGROWN IMPLANTED SILICON [J]. PHYSICA B & C, 1985, 129 (1-3): : 166 - 170

[6] DEFECTS LEFT AFTER REGROWTH OF AMORPHOUS-SILICON ON CRYSTALLINE-SI - C(V) AND DLTS STUDIES [J]. REVUE DE PHYSIQUE APPLIQUEE, 1985, 20 (01): : 29 - 35

[7] CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[8] DOGHMANE MS, 1985, MATER RES SOC S P, V35, P287

[9] GOUGH PA, UNPUB HECTOR 2D DEVI

[10] DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 241 - 246