THE OBSERVATION OF DEEP DONOR LEVELS IN EPITAXIALLY REGROWN IMPLANTED SILICON

被引：3

作者：

BROTHERTON, SD

BRADLEY, P

GILL, A

机构：

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90562-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：166 / 170

页数：5

共 14 条

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