DEFECT PRODUCTION AND LIFETIME CONTROL IN ELECTRON AND GAMMA-IRRADIATED SILICON

被引：303

作者：

BROTHERTON, SD

BRADLEY, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.331460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5720 / 5732

页数：13

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