DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION

[1] INSTRUMENT FOR RAPID DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILES [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1971, 4 (03): : 213 - +

[2] GOETZBERGER A, COMMUNICATION

[3] GREEUW G, 1981, INSULATING FILMS SEM

[4] GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 312 - 314

[5] HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626

[6] MOBILITY OF POTASSIUM-IONS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4834 - 4837

[7] KALTER H, 1979, PHILIPS TECH REV, V38, P200

[8] CONTROL OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY CHLORINE IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 225 - 232

[9] KEMERINK GJ, 1981, THESIS STATE U GRONI

[10] ROLE OF HCL IN PASSIVATION OF MOS STRUCTURES [J]. THIN SOLID FILMS, 1972, 13 (01) : 11 - &

[1] INSTRUMENT FOR RAPID DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILES [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1971, 4 (03): : 213 - +

[2] GOETZBERGER A, COMMUNICATION

[3] GREEUW G, 1981, INSULATING FILMS SEM

[4] GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 312 - 314

[5] HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626

[6] MOBILITY OF POTASSIUM-IONS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4834 - 4837

[7] KALTER H, 1979, PHILIPS TECH REV, V38, P200

[8] CONTROL OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY CHLORINE IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 225 - 232

[9] KEMERINK GJ, 1981, THESIS STATE U GRONI

[10] ROLE OF HCL IN PASSIVATION OF MOS STRUCTURES [J]. THIN SOLID FILMS, 1972, 13 (01) : 11 - &