GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION

被引：22

作者：

HATTORI, T ^{[1
]}

机构：

[1] SONY CORP,RES CTR,YOKOHAMA 240,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 07期

关键词：

D O I：

10.1063/1.89404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：312 / 314

页数：3

共 18 条

[1] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING
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[2] OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON
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HILE, JW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) : 223 - +
[3] EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES
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HATTORI, T
MAY, GA
BEAUDOUIN, J
MEINDL, JD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 436 - 439
[4] ELIMINATION OF STACKING-FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION
HATTORI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 945 - 946
[5] INFLUENCE OF TRICHLOROETHYLENE ON ROOM-TEMPERATURE FLATBAND VOLTAGES OF MOS CAPACITORS
HEALD, DL
DAS, RM
KHOSLA, RP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 302 - 303
[6] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 165 - 167
[7] LAWRENCE JE, 1975, Patent No. 3905162
[8] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS
PETROFF, PM
ROZGONYI, GA
SHENG, TT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570
[9] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS
ROZGONYI, GA
PETROFF, PM
READ, MH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729
[10] ROZGONYI GA, 1976, 149TH EL CHEM SOC M, P171

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