EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES

被引:53
作者
DECLERCK, GJ [1 ]
HATTORI, T [1 ]
MAY, GA [1 ]
BEAUDOUIN, J [1 ]
MEINDL, JD [1 ]
机构
[1] STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
关键词
D O I
10.1149/1.2134230
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:436 / 439
页数:4
相关论文
共 18 条
[1]   PHOSPHOSILICATE GLASS STABILIZATION OF FET DEVICES [J].
BALK, P ;
ELDRIDGE, JM .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1558-+
[2]  
BAXTER RD, 1973, INVESTIGATION IMPURI
[3]  
Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363
[4]   OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON [J].
CHEN, MC ;
HILE, JW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) :223-+
[5]  
COLLINS TW, TO BE PUBLISHED
[6]   MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J].
DECLERCK, G ;
VANOVERS.R ;
BROUX, G .
SOLID-STATE ELECTRONICS, 1973, 16 (12) :1451-1460
[8]   KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J].
HIRABAYA.K ;
IWAMURA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1595-1601
[10]   NEUTRALIZATION OF NA+ IONS IN HCL-GROWN SIO2 [J].
KRIEGLER, RJ .
APPLIED PHYSICS LETTERS, 1972, 20 (11) :449-&