OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON

被引：32

作者：

CHEN, MC

HILE, JW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 02期

关键词：

D O I：

10.1149/1.2404165

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：223 / +

页数：1

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