GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION

被引：22

作者：

HATTORI, T ^{[1
]}

机构：

[1] SONY CORP,RES CTR,YOKOHAMA 240,JAPAN

来源：

关键词：

D O I：

10.1063/1.89404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：312 / 314

页数：3

共 18 条

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