INFLUENCE OF TRICHLOROETHYLENE ON ROOM-TEMPERATURE FLATBAND VOLTAGES OF MOS CAPACITORS

被引：15

作者：

HEALD, DL ^{[1
]}

DAS, RM ^{[1
]}

KHOSLA, RP ^{[1
]}

机构：

[1] UNIV CALIF,DEPT ELECT ENGN & COMP SCI,SANTA BARBARA,CA 93106

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 02期

关键词：

D O I：

10.1149/1.2132808

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：302 / 303

页数：2

相关论文

共 8 条

[1] OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON
CHEN, MC
HILE, JW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) : 223 - +
[2] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : C198 - C205
[3] EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES
DECLERCK, GJ
HATTORI, T
MAY, GA
BEAUDOUIN, J
MEINDL, JD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 436 - 439
[4] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
CHENG, YC
COLTON, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 388 - &
[5] KRIEGLER RJ, 1975, DIGEST TECHNICAL PAP, P55
[6] KRIEGLER RJ, 1971, J ELECTROCHEM SOC, V118, pC73
[7] USE OF HCI GETTERING IN SILICON DEVICE PROCESSING
ROBINSON, PH
HEIMAN, FP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 141 - +
[8] PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12
VANDERMEULEN, YJ
OSBURN, CM
ZIEGLER, JF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (02) : 284 - 290