PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12

被引：66

作者：

VANDERMEULEN, YJ ^{[1
]}

OSBURN, CM ^{[1
]}

ZIEGLER, JF ^{[1
]}

机构：

[1] IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 02期

关键词：

D O I：

10.1149/1.2134196

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：284 / 290

页数：7

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