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USE OF HCI GETTERING IN SILICON DEVICE PROCESSING
被引:74
作者
:
ROBINSON, PH
论文数:
0
引用数:
0
h-index:
0
ROBINSON, PH
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1971年
/ 118卷
/ 01期
关键词
:
D O I
:
10.1149/1.2407929
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:141 / +
页数:1
相关论文
共 15 条
[1]
PROPERTIES OF GOLD IN SILICON
BULLIS, WM
论文数:
0
引用数:
0
h-index:
0
BULLIS, WM
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(02)
: 143
-
&
[2]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
[3]
METAL PRECIPITATES IN SILICON P-N JUNCTIONS
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
SHOCKLEY, W
论文数:
0
引用数:
0
h-index:
0
SHOCKLEY, W
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(10)
: 1821
-
1824
[4]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 379
-
&
[5]
ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 781
-
+
[6]
SILICON-ON-SAPPHIRE EPITAXIAL BIPOLAR TRANSISTORS
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, NJ
HEIMAN, FP
ROBINSON, PH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, NJ
ROBINSON, PH
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(04)
: 411
-
&
[7]
GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
MORRISON, RE
论文数:
0
引用数:
0
h-index:
0
MORRISON, RE
ALT, LL
论文数:
0
引用数:
0
h-index:
0
ALT, LL
ALDRICH, RW
论文数:
0
引用数:
0
h-index:
0
ALDRICH, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 533
-
537
[8]
LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484
[9]
ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(08)
: 796
-
&
[10]
MAYER A, PRIVATE COMMUNICATIO
←
1
2
→
共 15 条
[1]
PROPERTIES OF GOLD IN SILICON
BULLIS, WM
论文数:
0
引用数:
0
h-index:
0
BULLIS, WM
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(02)
: 143
-
&
[2]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
[3]
METAL PRECIPITATES IN SILICON P-N JUNCTIONS
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
SHOCKLEY, W
论文数:
0
引用数:
0
h-index:
0
SHOCKLEY, W
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(10)
: 1821
-
1824
[4]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 379
-
&
[5]
ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 781
-
+
[6]
SILICON-ON-SAPPHIRE EPITAXIAL BIPOLAR TRANSISTORS
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, NJ
HEIMAN, FP
ROBINSON, PH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, NJ
ROBINSON, PH
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(04)
: 411
-
&
[7]
GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
MORRISON, RE
论文数:
0
引用数:
0
h-index:
0
MORRISON, RE
ALT, LL
论文数:
0
引用数:
0
h-index:
0
ALT, LL
ALDRICH, RW
论文数:
0
引用数:
0
h-index:
0
ALDRICH, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 533
-
537
[8]
LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484
[9]
ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(08)
: 796
-
&
[10]
MAYER A, PRIVATE COMMUNICATIO
←
1
2
→