MOBILITY OF POTASSIUM-IONS IN SIO2

被引：22

作者：

HILLEN, MW

GREEUW, G

VERWEIJ, JF

机构：

[1] Technical Physics Laboratory, Groningen State University, 9747 AG Groningen

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.326547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method to measure the mobility of K+ ions in SiO 2 is proposed. The method is based on the TVS (triangular voltage sweep) technique at temperatures above 300 °C. The dependence of the voltage at which the current maximum occurs on the sweep rate provides the mobility at a particular temperature. Measurements at different temperatures show that the mobility of K+ ions in SiO2 can be described by μ (T) = (17.46/T) exp(-1.09/kT) cm2 V-1 s-1 in the temperature region 300-450 °C.

引用

页码：4834 / 4837

页数：4

共 8 条

[1] MOBILE IONS IN SIO2 - POTASSIUM
DERBENWICK, GF
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[3] Hillen MW., 1978, PHYS SIO2 ITS INTERF, P179
[4] JANSSENS EJ, 1978, J ELECTROCHEM SOC, V125, P1996
[5] DIRECT MEASUREMENT OF NA+ ION MOBILITY IN SIO2-FILMS
KRIEGLER, RJ
DEVENYI, TF
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[6] MOTT NF, 1964, ELECTRONIC PROCESSES
[7] INVESTIGATION OF MOBILE IONS IN MOS STRUCTURES USING TSIC METHOD
NAUTA, PK
HILLEN, MW
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) : 2862 - 2865
[8] DRIFT MOBILITIES OF NA+ AND K+ IONS IN SIO2-FILMS
STAGG, JP
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (08) : 532 - 533

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