INVESTIGATION OF MOBILE IONS IN MOS STRUCTURES USING TSIC METHOD

被引：21

作者：

NAUTA, PK

HILLEN, MW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2862 / 2865

页数：4

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[1] MOBILE IONS IN SIO2 - POTASSIUM
DERBENWICK, GF
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1127 - 1130
[2] THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2
HICKMOTT, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2583 - 2598
[3] USE OF THERMALLY STIMULATED IONIC CURRENTS WITH A HYPERBOLIC HEATING RATE TO MEASURE SODIUM MOTION IN RF-SPUTTERED SIO2 FILMS
HICKMOTT, TW
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 267 - 269
[4] EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2
HICKMOTT, TW
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (02) : 65 - 67
[5] DIRECT MEASUREMENT OF NA+ ION MOBILITY IN SIO2-FILMS
KRIEGLER, RJ
DEVENYI, TF
[J]. THIN SOLID FILMS, 1976, 36 (02) : 435 - 439
[6] TRANSFER OF MOBILE IONS FROM AQUEOUS-SOLUTIONS TO SILICON DIOXIDE SURFACE
RAIDER, SI
GREGOR, LV
FLITSCH, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 425 - 431