PHOTOCURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY IN SILICON

[1] OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2658 - 2665

[2] MEASUREMENT OF MINORITY-CARRIER CAPTURE CROSS-SECTIONS AND APPLICATION TO GOLD AND PLATINUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1543 - 1553

[3] THE WIDTH OF THE NON-STEADY STATE TRANSITION REGION IN DEEP LEVEL IMPURITY MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 987 - 990

[4] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 667 - 671

[5] ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (09) : 606 - 609

[6] DEEP-STATE-CONTROLLED MINORITY-CARRIER LIFETIME IN N-TYPE GALLIUM-PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6373 - 6385

[7] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[9] MITONNEAU A, 1977, I PHYS C SER A, V33, P73

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, P661

[1] OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2658 - 2665

[2] MEASUREMENT OF MINORITY-CARRIER CAPTURE CROSS-SECTIONS AND APPLICATION TO GOLD AND PLATINUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1543 - 1553

[3] THE WIDTH OF THE NON-STEADY STATE TRANSITION REGION IN DEEP LEVEL IMPURITY MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 987 - 990

[4] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 667 - 671

[5] ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (09) : 606 - 609

[6] DEEP-STATE-CONTROLLED MINORITY-CARRIER LIFETIME IN N-TYPE GALLIUM-PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6373 - 6385

[7] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[9] MITONNEAU A, 1977, I PHYS C SER A, V33, P73

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, P661