DEFECTS LEFT AFTER REGROWTH OF AMORPHOUS-SILICON ON CRYSTALLINE-SI - C(V) AND DLTS STUDIES

被引：2

作者：

CASTAING, J ^{[1
]}

CASS, T ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1985年 / 20卷 / 01期

关键词：

D O I：

10.1051/rphysap:0198500200102900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：29 / 35

页数：7

相关论文

共 25 条

[1] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON
BARAFF, GA
SCHLUTER, M
ALLAN, G
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (10) : 739 - 742
[2] BARYAM, COMMUNICATION
[3] ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS
BLOOD, P
ORTON, JW
[J]. REPORTS ON PROGRESS IN PHYSICS, 1978, 41 (02) : 157 - 257
[4] CASS T, UNPUB
[5] CASTAING J, 1982, ICL828 HEWL LAB TECH
[6] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON
DROSD, R
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403
[7] GLOWINSKI LD, 1977, ION IMPLANTATION SEM, P461
[8] HOW TO DETERMINE PARAMETERS OF DEEP LEVELS BY DLTS SINGLE TEMPERATURE SCANNING
GOTO, H
ADACHI, Y
IKOMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) : 1979 - 1982
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022