EFFECT OF OXYGEN-PRESSURE ON OXYGEN INCORPORATION IN SI AND GA AS DURING Q-SWITCHED LASER IRRADIATION

[1] CULIS AG, 1982, LASER ELECTRON BEAM, P131

[2] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 722 - 724

[3] ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 825 - 827

[4] HOH K, 1980, JAP J APPL PHYS, V19, pL374

[5] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[6] Liu Y. S., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P117

[7] LASER OXIDATION OF GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : L726 - L728

[8] FORMATION OF EPITAXIAL NIO BY OXYGEN IMPLANTATION IN [100] NI [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 303 - 313

[9] ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (20) : 1356 - 1358

[10] Westendorp J. F. M., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P255

[1] CULIS AG, 1982, LASER ELECTRON BEAM, P131

[2] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 722 - 724

[3] ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 825 - 827

[4] HOH K, 1980, JAP J APPL PHYS, V19, pL374

[5] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 864 - 866

[6] Liu Y. S., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P117

[7] LASER OXIDATION OF GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : L726 - L728

[8] FORMATION OF EPITAXIAL NIO BY OXYGEN IMPLANTATION IN [100] NI [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 303 - 313

[9] ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (20) : 1356 - 1358

[10] Westendorp J. F. M., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P255