LASER OXIDATION OF GAAS

被引：19

作者：

MATSUURA, M

ISHIDA, M

SUZUKI, A

HARA, K

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,SAKYO KU,KYOTO 606,JAPAN

[2] NIPPONDENSO CO LTD,KARIYA 448,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 10期

关键词：

D O I：

10.1143/JJAP.20.L726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L726 / L728

页数：3

共 7 条

[1]

CHANG PPH, 1969, APPL PHYS LETT, V29, P56

[2] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[3] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[4] ATOMICALLY CLEAN SEMICONDUCTOR SURFACES PREPARED BY LASER IRRADIATION [J].

MCKINLEY, A ;

PARKE, AW ;

HUGHES, GJ ;

FRYAR, J ;

WILLIAMS, RH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (10) :L193-L197

[5]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9

[6] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

WHITE, CW ;

NARAYAN, J ;

YOUNG, RT .

SCIENCE, 1979, 204 (4392) :461-468

[7] PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION [J].

ZEHNER, DM ;

WHITE, CW ;

OWNBY, GW .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :56-59

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