ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON

被引：48

作者：

DEUTSCH, TF

EHRLICH, DJ

RATHMAN, DD

SILVERSMITH, DJ

OSGOOD, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.92572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：825 / 827

页数：3

共 6 条

[1] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[2] OHMIC CONTACT FORMATION ON INP BY PULSED LASER PHOTOCHEMICAL DOPING [J].

DEUTSCH, TF ;

EHRLICH, DJ ;

OSGOOD, RM ;

LIAU, ZL .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :847-849

[3] EFFICIENT SI SOLAR-CELLS BY LASER PHOTOCHEMICAL DOPING [J].

DEUTSCH, TF ;

FAN, JCC ;

TURNER, GW ;

CHAPMAN, RL ;

EHRLICH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :144-146

[4] UV PHOTOLYSIS OF VANDERWAALS MOLECULAR FILMS [J].

EHRLICH, DJ ;

OSGOOD, RM .

CHEMICAL PHYSICS LETTERS, 1981, 79 (02) :381-388

[5]

Fan J. C. C., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P432

[6] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

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