THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON

被引：122

作者：

WANG, JC

WOOD, RF

PRONKO, PP

机构：

来源：

关键词：

D O I：

10.1063/1.90377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：455 / 458

页数：4

共 12 条

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[2] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K
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[J]. PHYSICAL REVIEW, 1968, 167 (03): : 765 - +
[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144
[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[5] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
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[J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +
[6] GRINBERG AA, 1967, FIZ TVERD TELA+, V9, P1085
[7] KACHURIN GA, 1977, SOV PHYS SEMICOND+, V11, P350
[8] KODERA H, 1965, JPN J APPL PHYS, V2, P212
[9] THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1400 DEGREES K
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[J]. PHYSICAL REVIEW, 1963, 130 (05): : 1743 - &
[10] SHASHKOV YM, 1968, RUSS J PHYS CH USSR, V42, P1082