EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING

被引：27

作者：

DEUTSCH, TF

FAN, JCC

EHRLICH, DJ

TURNER, GW

CHAPMAN, RL

GALE, RP

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：722 / 724

页数：3

共 10 条

[1]

ANDERSON CL, 1980, LASER ELECTRON BEAM, P334

[2]

CHAPMAN RL, UNPUB APPL PHYS LETT

[3] EFFICIENT SI SOLAR-CELLS BY LASER PHOTOCHEMICAL DOPING [J].

DEUTSCH, TF ;

FAN, JCC ;

TURNER, GW ;

CHAPMAN, RL ;

EHRLICH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :144-146

[4] ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J].

DEUTSCH, TF ;

EHRLICH, DJ ;

RATHMAN, DD ;

SILVERSMITH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :825-827

[5]

Fan J. C. C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P261

[6]

Fan J. C. C., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P432

[7] SIMPLIFIED FABRICATION OF GAAS HOMOJUNCTION SOLAR-CELLS WITH INCREASED CONVERSION EFFICIENCIES [J].

FAN, JCC ;

BOZLER, CO ;

CHAPMAN, RL .

APPLIED PHYSICS LETTERS, 1978, 32 (06) :390-392

[8]

FAN JCC, 1979, APPL PHYS LETT, V35, P875, DOI 10.1063/1.90990

[9] ION-IMPLANTED LASER-ANNEALED GAAS SOLAR-CELLS [J].

FAN, JCC ;

CHAPMAN, RL ;

DONNELLY, JP ;

TURNER, GW ;

BOZLER, CO .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :780-782

[10] SOLAR-CELLS MADE BY LASER-INDUCED DIFFUSION DIRECTLY FROM PHOSPHINE GAS [J].

TURNER, GB ;

TARRANT, D ;

POLLOCK, G ;

PRESSLEY, R ;

PRESS, R .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :967-969

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