A SHALLOW JUNCTION SUBMICROMETER PMOS PROCESS WITHOUT HIGH-TEMPERATURE ANNEALS

[11] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62

[12] OPTIMIZATION OF THE GERMANIUM PREAMORPHIZATION CONDITIONS FOR SHALLOW-JUNCTION FORMATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 659 - 668

[13] WEINER KH, 1988, P C LAS PROC MICR AP, V8810, P53

[11] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62

[12] OPTIMIZATION OF THE GERMANIUM PREAMORPHIZATION CONDITIONS FOR SHALLOW-JUNCTION FORMATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 659 - 668

[13] WEINER KH, 1988, P C LAS PROC MICR AP, V8810, P53