OPTIMIZATION OF THE GERMANIUM PREAMORPHIZATION CONDITIONS FOR SHALLOW-JUNCTION FORMATION

被引:83
作者
OZTURK, MC
WORTMAN, JJ
OSBURN, CM
AJMERA, A
ROZGONYI, GA
FREY, E
CHU, WK
LEE, C
机构
[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514
[3] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27695
关键词
D O I
10.1109/16.2510
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:659 / 668
页数:10
相关论文
共 40 条
  • [1] ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI
    AJMERA, AC
    ROZGONYI, GA
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1269 - 1271
  • [2] AJMERA AC, 1987 ECS FALL M HAW
  • [3] GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN
    BACCARANI, G
    WORDEMAN, MR
    DENNARD, RH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 452 - 462
  • [4] Burenkov A.F., 1986, TABLES ION IMPLANTAT
  • [5] INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS
    CEMBALI, F
    SERVIDORI, M
    LANDI, E
    SOLMI, S
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01): : 315 - 319
  • [6] CHANNELING EFFECT FOR LOW-ENERGY ION-IMPLANTATION IN SI
    CHO, K
    ALLEN, WR
    FINSTAD, TG
    CHU, WK
    LIU, J
    WORTMAN, JJ
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 265 - 272
  • [7] SHALLOW BORON-DOPED JUNCTIONS IN SILICON
    COHEN, SS
    NORTON, JF
    KOCH, EF
    WEISEL, GJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1200 - 1213
  • [8] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
    CSEPREGI, L
    MAYER, JW
    SIGMON, TW
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
  • [9] DITCHEK BM, IN PRESS 1987 P MRS
  • [10] Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658