INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS

被引：27

作者：

CEMBALI, F

SERVIDORI, M

LANDI, E

SOLMI, S

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 01期

关键词：

D O I：

10.1002/pssa.2210940138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 319

页数：5

共 9 条

[1] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].

CARTER, C ;

MASZARA, W ;

SADANA, DK ;

ROZGONYI, GA ;

LIU, J ;

WORTMAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :459-461

[2] DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON [J].

CEMBALI, F ;

SERVIDORI, M ;

ZANI, A .

SOLID-STATE ELECTRONICS, 1985, 28 (09) :933-&

[3] EFFECT OF DIFFUSE-SCATTERING IN THE STRAIN PROFILE DETERMINATION BY DOUBLE CRYSTAL X-RAY-DIFFRACTION [J].

CEMBALI, F ;

SERVIDORI, M ;

GABILLI, E ;

LOTTI, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 87 (01) :225-233

[4] THEORY OF DIFFUSE X-RAY-SCATTERING AND ITS APPLICATION TO STUDY OF POINT-DEFECTS AND THEIR CLUSTERS [J].

DEDERICHS, PH .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (02) :471-496

[5] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

LIU, TM ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :59-62

[6] TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF LOW-TEMPERATURE ION-IMPLANTED (100) SILICON [J].

SERVIDORI, M ;

VECCHI, I .

SOLID-STATE ELECTRONICS, 1981, 24 (04) :329-331

[7] EFFECT OF THE ANNEALING CONDITIONS ON THE ELECTRICAL CHARACTERISTICS OF P+/N SHALLOW JUNCTIONS [J].

SOLMI, S ;

LANDI, E ;

NEGRINI, P .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :359-361

[8] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+ [J].

TSAI, MY ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :183-187

[9] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI [J].

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6879-6889

← 1 →