TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF LOW-TEMPERATURE ION-IMPLANTED (100) SILICON

被引:11
作者
SERVIDORI, M
VECCHI, I
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D O I
10.1016/0038-1101(81)90026-5
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:329 / 331
页数:3
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共 13 条
[1]   EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED BASES [J].
ASHBURN, P ;
BULL, C ;
NICHOLAS, KH ;
BOOKER, GR .
SOLID-STATE ELECTRONICS, 1977, 20 (09) :731-740
[2]   MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].
BENTINI, GG ;
GALLONI, R ;
NIPOTI, R .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :661-663
[3]   RADIATION-DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION - RANDOM AND ALIGNED IMPLANTS [J].
CEMBALI, F ;
DORI, L ;
GALLONI, R ;
SERVIDORI, M ;
ZIGNANI, F .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :111-117
[4]   INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].
CORRERA, L ;
PEDULLI, L .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :55-57
[5]   SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911
[6]   CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
PHYSICS LETTERS A, 1975, 54 (02) :157-158
[7]   INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON-MOBILITY IN HEAVILY DOPED SILICON [J].
FINETTI, M ;
GALLONI, R ;
MAZZONE, AM .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1381-1385
[8]  
GLASER E, 1978, 1ST P C ION BEAM MOD, P1067
[9]  
KIMERLING LC, 1980, LASER ELECTRON BEAM, P385
[10]  
NICHOLAS KH, 1976, J PHYS D, V9, P393