INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON

[1] AUSTON DH, MRS S P, P11

[2] MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 661 - 663

[3] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 955 - 957

[4] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 751 - 753

[5] ARC ANNEALING OF BF+2 IMPLANTED SILICON BY A SHORT PULSE FLASH LAMP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 73 - 76

[6] RIMINI E, 1979, 1978 P WORKSH LAS IO

[7] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421

[8] WHITE CW, MRS S P

[9] ZIGNANI F, 1979, 2ND EC PHOT SOL EN C, P213

[10] 1979, CNRCEE197767ESI CONT

[1] AUSTON DH, MRS S P, P11

[2] MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 661 - 663

[3] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 955 - 957

[4] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 751 - 753

[5] ARC ANNEALING OF BF+2 IMPLANTED SILICON BY A SHORT PULSE FLASH LAMP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 73 - 76

[6] RIMINI E, 1979, 1978 P WORKSH LAS IO

[7] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421

[8] WHITE CW, MRS S P

[9] ZIGNANI F, 1979, 2ND EC PHOT SOL EN C, P213

[10] 1979, CNRCEE197767ESI CONT