DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON

被引：48

作者：

CEMBALI, F

SERVIDORI, M

ZANI, A

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(85)90087-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：933 / &

共 7 条

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[2] STRAIN PROFILES IN ION-DOPED SILICON OBTAINED FROM X-RAY ROCKING CURVES
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[3] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3181 - 3185
[4] Petrashen P. V., 1975, Soviet Physics - Solid State, V16, P1417
[5] TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF LOW-TEMPERATURE ION-IMPLANTED (100) SILICON
SERVIDORI, M
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[J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 329 - 331
[6] RESIDUAL LATTICE DISORDER IN SELF-IMPLANTED SILICON AFTER PULSED LASER IRRADIATION
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02): : 691 - 701
[7] THEORIE DYNAMIQUE DE LA DIFFRACTION DES RAYONS X PAR LES CRISTAUX DEFORMES
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