STRAIN PROFILES IN ION-DOPED SILICON OBTAINED FROM X-RAY ROCKING CURVES

被引：128

作者：

KYUTT, RN ^{[1
]}

PETRASHEN, PV ^{[1
]}

SOROKIN, LM ^{[1
]}

机构：

[1] ALL UNION SCI INSTRUMENTS RES INST,LENINGRAD,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 60卷 / 02期

关键词：

D O I：

10.1002/pssa.2210600207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：381 / 389

页数：9

相关论文

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