Growth, structural and optical transport properties of nanocrystal Zn1-xCdS thin films deposited by solution growth technique (SGT) for photosensor applications

Solution Growth Technique (SGT) has been used for deposition of Zn1-xCdS nanocrystalline thin films. Various parameters such as solution pH (10.4), deposition time, concentration of ions, composition and deposition and annealing temperatures have been optimized for the development of device grade thin film. In order to achieve uniformity and adhesiveness of thin film on glass substrate. 5 ml triethanolamine (TEA) have been added in deposition solution. The as-deposited filins have been annealed in Rapid Thermal Annealing (RTA) system at various temperature ranges from 100 to 500 degrees C in air. The changes in structural formation and optical transport phenomena have been studied with annealing temperatures and composition value (x). As-deposited filins have two phases of ZnS and CdS. which were confirmed by X-ray diffraction studies; further the X-ray analysis of annealed (380 degrees C) films indicates that the films have nanocrystalline size (150 nm) and crystal structure depends on the films stoichiometry and annealing temperatures. The Zn0.4CdS films annealed at 380 degrees C in air for 5 min have hexagonal structure where as films annealed at 500 degrees C have represented the oxide phase with hexagonal structure. Optical properties of the films were studied in the wavelength range 350-1000 nm. The optical band gap (E-g = 2.94-2.30 eV) decreases with the composition (x) value. The effect of air rapid annealing on the photoresponse has also been observed on Zn1-xCdS nanocrystal thin films. The Zn1-xCdS thin film has higher photosensitivity at higher annealing temperatures (380-500 degrees C), and films also have mixed Zn1-xCdS/Zn1-xCdSO phase with larger grain size than the as-deposited and films annealed up to 380 degrees C. The present results are well agreed with the results of other studies. (c) 2005 Elsevier Ltd. All rights reserved.