Dependence of the diamond coating adhesion on the microstructure of SiC-based substrates

被引:4
作者
Chae, KW [1 ]
Baik, YJ
Kim, DY
机构
[1] Hoseo Univ, Coll Engn, Dept Mat Engn, Chungnam 336795, South Korea
[2] KIST, Thin Film Technol Res Ctr, Seoul 130650, South Korea
[3] Seoul Natl Univ, Coll Engn, Sch Mat Sci & Engn, Seoul 151742, South Korea
[4] Seoul Natl Univ, Coll Engn, Ctr Microstruct Sci Mat, Seoul 151742, South Korea
关键词
diamond coating adhesion; SiC-based substrates; beta-d transformation;
D O I
10.1016/S0925-9635(98)00440-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond thin films were deposited on the SiC-30TiC-10Cr(3)C(2) substrates by using the microwave plasma CVD method and the effect of microstructural morphology of substrate was examined on the diamond-substrate adhesion strength. Two types of substrate were prepared by hot-pressing, one with small and equiaxed beta-SiC grains and the other with large and elongated alpha-SiC grains. The SiC-30TiC-10Cr(3)C(2) substrate surfaces were chemically etched to remove (Ti,Cr)C matrix phase by Murakami solution. Better diamond-substrate bonding was obtained on the substrate composed of large, elongated grains. Vickers indentation results indicated that mechanical interlocking between elongated and protruded grains on the etched surface and diamond thin him resulted in an increase in adhesion strength. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1018 / 1021
页数:4
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