Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode

We observe localized strains in strained silicon by tip-enhanced near-field Raman spectroscope in reflection mode. The tip-enhanced Raman spectra show that the Raman frequency and intensity of strained silicon were different within a crosshatch pattern induced by lattice mismatch. Micro-Raman measurements, however, show only uniform features because of averaging effect due to the diffraction limit of light. Nanoscale characterization of strained silicon is essential for developing reliable next generation integrated circuits. This technique can be applicable not only to strained silicon but also to any other crystals.