Quantum galvanomagnetic effects in the organic metal alpha-(BEDT-TTF)(2)TlHg(SCN)(4)

被引：19

作者：

Harrison, N

Honold, MM

Kartsovnik, MV

Singleton, J

Hannahs, ST

Rickel, DG

Kushch, ND

机构：

[1] UNIV OXFORD,DEPT PHYS,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

[2] WALTHER MEISSNER INST TIEFTEMP FORSCH,D-85748 GARCHING,GERMANY

[3] FLORIDA STATE UNIV,NATL HIGH MAGNET FIELD LAB,TALLAHASSEE,FL 32306

[4] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.55.R16005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The transverse magnetoresistance and Hall effect of the organic metal alpha-(BEDT-TTF)(2)TlHg(SCN)(4) have been studied in static magnetic fields of up to 33 T applied perpendicular to the highly conducting planes. The Hall resistivity is found to exhibit strong oscillations caused by the coexistance of quasi-one-dimensional and quasi-two-dimensional states in the electronic system. In higher quality crystals, plateaulike features appear at magnetic fields above similar to 30 T, which are consistent with recent claims of the quantum Hall effect in this material.

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页码：16005 / 16008

页数：4

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