Capacitance-Voltage Characterization of GaAs-Oxide Interfaces

被引：62

作者：

Brammertz, G. ^{[1
]}

Lin, H. C. ^{[3
]}

Martens, K. ^{[1
]}

Mercier, D. ^{[1
]}

Merckling, C. ^{[1
]}

Penaud, J. ^{[2
]}

Adelmann, C. ^{[1
]}

Sioncke, S. ^{[1
]}

Wang, W. E. ^{[4
]}

Caymax, M. ^{[1
]}

Meuris, M. ^{[1
]}

Heyns, M. ^{[1
,5
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

[2] Riber, F-95870 Bezons, France

[3] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[4] IMEC, B-3001 Louvain, Belgium

[5] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 12期

关键词：

D O I：

10.1149/1.2988045

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We will shortly review the basic physics of charge-carrier trapping and emission from trapping states within the bandgap of a semiconductor in order to show that high-temperature capacitance-voltage (C-V) measurements are necessary for GaAs metal-oxide-semiconductor characterization. The midgap trapping states in GaAs have characteristic emission times on the order of 1000 s, which makes them extremely complicated to measure at room temperature. Higher substrate temperatures speed up these emission times, which makes measurements of the midgap traps possible with standard C-V measurements. C-V characterizations of GaAs/Al2O3, GaAs/Gd2O3, GaAs/HfO2, and In0.15Ga0.85As/Al2O3 interfaces show the existence of four interface state peaks, independent of the gate oxide deposited: a hole trap peak close to the valence band, a hole trap peak close to midgap energies, an electron trap peak close to midgap energies, and an electron trap peak close to the conduction band. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2988045] All rights reserved.

引用

页码：H945 / H950

页数：6

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