Double-island single-electron devices - A useful unit device for single-electron logic LSI's

被引:45
作者
Fujiwara, A [1 ]
Takahashi, Y [1 ]
Yamazaki, K [1 ]
Namatsu, H [1 ]
Nagase, M [1 ]
Kurihara, K [1 ]
Murase, K [1 ]
机构
[1] NTT, Basic Res Labs, Kanagawa 2430198, Japan
关键词
nanotechnology; quantum dots; quantum-effect semiconductor devices; SIMOX; tunneling;
D O I
10.1109/16.760403
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated a single-electron device that is useful as a unit device for single-electron logic circuits. The device is a three-current-terminal device fabricated on a silicon-on-insulator (SOI) wafer, which includes two Si islands whose electric potential can be controlled by gates, Sub-50-nm Si islands were integrated in an area smaller than 0.02 mu m(2) through self-aligned formation of the islands by pattern-dependent oxidation (PADOX) of a T-shaped mire. By PADOX, each island was embedded in one branch of the T-shaped wire, We show two electrical characteristics which demonstrate the usefulness of this device as a circuit element. First, current switching between two branches was performed at 30 K by using gate voltage to control the Coulomb blockade in each island. Second, a correlation between the two currents was observed because the two islands were integrated close to each other, The latter indicates a capacitive coupling between the islands, which opens up the possibility of one-by-one transfer of electrons in this device. These findings show that the proposed island-integration technique is applicable to making ultra-low-power and highly integrated single-electron circuits.
引用
收藏
页码:954 / 959
页数:6
相关论文
共 15 条
[1]   Single-electron logic device based on the binary decision diagram [J].
Asahi, N ;
Akazawa, M ;
Amemiya, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (07) :1109-1116
[2]   TIME-RESOLVED MEASUREMENT OF SINGLE-ELECTRON TUNNELING IN A SI SINGLE-ELECTRON TRANSISTOR WITH SATELLITE SI ISLANDS [J].
FUJIWARA, A ;
TAKAHASHI, Y ;
MURASE, K ;
TABE, M .
APPLIED PHYSICS LETTERS, 1995, 67 (20) :2957-2959
[3]  
FUJIWARA A, 1998, IN PRESS JPN J APPL, V37
[4]   FREQUENCY-LOCKED TURNSTILE DEVICE FOR SINGLE ELECTRONS [J].
GEERLIGS, LJ ;
ANDEREGG, VF ;
HOLWEG, PAM ;
MOOIJ, JE ;
POTHIER, H ;
ESTEVE, D ;
URBINA, C ;
DEVORET, MH .
PHYSICAL REVIEW LETTERS, 1990, 64 (22) :2691-2694
[5]   A silicon single-electron transistor memory operating at room temperature [J].
Guo, LJ ;
Leobandung, E ;
Chou, SY .
SCIENCE, 1997, 275 (5300) :649-651
[6]   SINGLE-ELECTRON SWITCHING IN A PARALLEL QUANTUM-DOT [J].
HOFMANN, F ;
HEINZEL, T ;
WHARAM, DA ;
KOTTHAUS, JP ;
BOHM, G ;
KLEIN, W ;
TRANKLE, G ;
WEIMANN, G .
PHYSICAL REVIEW B, 1995, 51 (19) :13872-13875
[7]   Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate [J].
Ishikuro, H ;
Fujii, T ;
Saraya, T ;
Hashiguchi, G ;
Hiramoto, T ;
Ikoma, T .
APPLIED PHYSICS LETTERS, 1996, 68 (25) :3585-3587
[8]   SINGLE-ELECTRON TRANSISTORS - ELECTROSTATIC ANALOGS OF THE DC SQUIDS [J].
LIKHAREV, KK .
IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :1142-1145
[9]  
NAGASE M, 1994, P 6 INT S SOI TECHN, P191
[10]   Room temperature operation of Si single-electron memory with self-aligned floating dot gate [J].
Nakajima, A ;
Futatsugi, T ;
Kosemura, K ;
Fukano, T ;
Yokoyama, N .
APPLIED PHYSICS LETTERS, 1997, 70 (13) :1742-1744