Intersubband absorption saturation study of narrow III-V multiple quantum wells in the lambda=2.8-9 mu m spectral range

被引：55

作者：

Vodopyanov, KL ^{[1
]}

Chazapis, V ^{[1
]}

Phillips, CC ^{[1
]}

Sung, B ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 06期

关键词：

D O I：

10.1088/0268-1242/12/6/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intersubband relaxation times, tin, in strained-layer InGaAs/AlGaAs multiple quantum well (MQW) structures with narrow (down to 26 Angstrom) well widths and large (up to 454 eV) conduction subband spacings have been measured for the first time using short mid-infrared pulses from an optical parametric generator. Absorption saturation measurements over a large dynamic range of resonant light (10(5)-10(10) W cm(-2)) yield tau(12) in the range 0.4-0.6 ps. We compare these lifetimes with those obtained for GaAs/AlGaAs structures with QW bound-to-quasibound transitions and similar subband separation. A comparison with the 'standard' GaAs/AlGaAs MQW structures with bound-to-bound transitions is also made.

引用

页码：708 / 714

页数：7

共 35 条

[1] RESONANTLY-ENHANCED NONLINEAR OPTICS OF INTERSUBBAND TRANSITIONS [J].