ELECTRONIC-PROPERTIES OF GA(IN)AS-BASED HETEROSTRUCTURES

被引：11

作者：

BASTARD, G

FERREIRA, R

机构：

[1] Dept. de Phys., Ecole Normale Superieure, Paris

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report theoretical results pertaining to the electronic properties of Ga(In)As-based quantum wells and superlattices. The focus is on a comparison between the Ga0.47In0.53As-InP and Ga 0.47In0.53As-Al0.48In0.52As systems where the well-acting material is the same, the barrier-acting materials are very similar but where the conduction band offsets are very different ( approximately=0.24 and 0.44 eV respectively). Features of electron and hole energy levels as well as scattering lifetimes are discussed.

引用

页码：470 / 480

页数：11

共 68 条

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