ELECTRONIC-PROPERTIES OF GA(IN)AS-BASED HETEROSTRUCTURES

被引:11
作者
BASTARD, G
FERREIRA, R
机构
[1] Dept. de Phys., Ecole Normale Superieure, Paris
关键词
D O I
10.1088/0268-1242/5/6/002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report theoretical results pertaining to the electronic properties of Ga(In)As-based quantum wells and superlattices. The focus is on a comparison between the Ga0.47In0.53As-InP and Ga 0.47In0.53As-Al0.48In0.52As systems where the well-acting material is the same, the barrier-acting materials are very similar but where the conduction band offsets are very different ( approximately=0.24 and 0.44 eV respectively). Features of electron and hole energy levels as well as scattering lifetimes are discussed.
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收藏
页码:470 / 480
页数:11
相关论文
共 68 条
[11]  
Gershoni D, Temkin H, Panish MB, Phys. Rev., 38, 11, (1988)
[12]  
Bastard G, Delalande C, Guldner Y, Voisin P, 72, (1988)
[13]  
17, (1982)
[14]  
Altarelli M, (1986)
[15]  
Broido DA, Sham LJ, Phys. Rev., 31, 2, (1985)
[16]  
Bastard G, Brum JA, Electronic states in semiconductor heterostructures, IEEE Journal of Quantum Electronics, 22, 9, (1986)
[17]  
Bastard G, (1988)
[18]  
Luttinger JM, Phys. Rev., 102
[19]  
Mendez EE, Agullo-Rueda F, Hong JM, Phys. Rev. Lett., 60, 23, (1988)
[20]  
Voisin P, Bleuse J, Bouche C, Gaillard S, Alibert C, Regreny A, Phys. Rev. Lett., 61, 14, (1988)