CdTe and Cd1-xZnxTe for nuclear detectors:: facts and fictions

被引：82

作者：

Fougeres, P

Siffert, P

Hageali, M

Koebel, JM

Regal, R

机构：

[1] EURORAD II VI SA, F-67037 Strasbourg, France

[2] CNRS, PHASE, F-67037 Strasbourg, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 428卷 / 01期

关键词：

CdZnTe; CdTe; THM; HPB; Zn segregation; nuclear detector;

D O I：

10.1016/S0168-9002(98)01578-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Both CdTe and Cd1-xZnxTe (CZT) can be considered from their physical properties as very goad materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：38 / 44

页数：7

共 42 条

[1]

BREBRICK RF, 1971, J ELECTROCHEM SOC, V118, P2015

[2]

BUBE, 1975, PHOTOCONDUCTIVITY SO

[3]

BURHSTEIN Z, 1993, APPL PHYSL LETT, V63, P102

[4] GAMMA-RAY AND X-RAY-DETECTORS MANUFACTURED FROM CD1-XZNX TE GROWN BY A HIGH-PRESSURE BRIDGMAN METHOD [J].