Simulation of the anisotropic growth of Goss grains in Fe3%Si sheets (grade HiB)

被引：17

作者：

Baudin, T

Paillard, P

Penelle, R

机构：

[1] Univ Paris 11, Lab Met Struct, URA 1107, CNRS, F-91405 Orsay, France

[2] ISITEM, Lab Gen Mat, F-44306 Nantes 03, France

来源：

SCRIPTA MATERIALIA | 1999年 / 40卷 / 10期

关键词：

D O I：

10.1016/S1359-6462(99)00050-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The anisotropic growth of Goss grains in Fe3%Si sheets (grade HiB) was studied using a new simulation procedure. For this study, the simulation procedure was implemented using a real microstructure measured by Orientation Imaging Microscopy (OIM) as an input data set. The influence of the texture inhomogeneity was analyzed from a theoretical point of view using Orientation Distribution Function (ODF) calculations and Monte-Carlo simulations without correlation with experimental measurements. The results indicate that in order to correctly describe the abnormal growth of Goss grains, it is very important to use an experimental microstructure as initial data set for the simulation so as to take into account morphological and textural inhomogeneities.

引用

页码：1111 / 1116

页数：6

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