Conduction and valence band edges of porous silicon determined by electron transfer

被引：60

作者：

Rehm, JM

McLendon, GL

Fauchet, PM

机构：

[1] UNIV ROCHESTER, DEPT CHEM, ROCHESTER, NY 14627 USA

[2] PRINCETON UNIV, DEPT CHEM, PRINCETON, NJ 08544 USA

[3] UNIV ROCHESTER, DEPT ELECT ENGN, ROCHESTER, NY 14627 USA

[4] UNIV ROCHESTER, DEPT PHYS & ASTRON, ROCHESTER, NY 14627 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1996年 / 118卷 / 18期

关键词：

D O I：

10.1021/ja9538795

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：4490 / 4491

页数：2

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